NanoMES - 3D metrology for the 3D measuring in the range of nanometers up to micrometers
The measuring device NanoMES based on interferometry serves the highly precise determination and control of etching depths during the etching of semiconductor wafers and micromechanical components. The dimensions of the structures to be measured are thereby in a range of nanometers up to micrometers. The measurements are carried out inprocess and in real-time. They are possible also at large working distances. A very short data acquisition time and the chosen construction ensure the insensibility for mechanical vibrations.
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Applications | - Real-time and in situ measurement of etching depths and rates during the plasma and/ or dry etching process of micro- and opto-electronic structures
| - 3D measurement of surface structure in microelectronics and micro system technology
| - Use in manufacturing as well as in research and development
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Features | - Measuring field: 1.5 x 1.1 mm²
| - Data acquisition time: 50 µsec
| - Measuring points: 640 x 480
| - Insensible for mechanical vibrations
| - Real-time and in-process measurement of etching depth or, respectively, 3D structure
| - Possibility of application at large working distances (up to 400 mm)
| - Measuring range upward nearly unlimited
| - Area evaluation algorithm
| - Qualified for the use in the production line and/ or on the etching chamber
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Advantages | - Continuous control of the etching process by automatic measurement in real-time
| - 3D measurement in the nanometer range without vibration insulation of the interferometer
| - High resolution (> 3 nm), high precision and repeatability of measurements
| - Direct measurement of the etching depth independent of material type
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PRODUCTS 
